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TOSHIBA GT60N321 1000V 60A N Channel IGBT
The TOSHIBA GT60N321 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) rated at 1000V and 60A, designed for high-efficiency power switching and energy control applications.
It combines the fast switching speed of a MOSFET with the high current-handling and voltage capability of a bipolar transistor. Built using Toshiba’s advanced IGBT technology, the GT60N321 provides low saturation voltage (Vce(sat)), low switching losses, and excellent ruggedness.
Encased in a TO-3P or TO-247 package, this IGBT ensures superior heat dissipation, mechanical stability, and reliable operation under demanding power conditions.
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Applications
- Inverter Circuits: Efficient DC–AC conversion in solar and industrial inverters
- Motor Drives: Smooth motor control and power efficiency in industrial systems
- SMPS (Switch Mode Power Supplies): High-speed switching for power conversion
- UPS Systems: Reliable high-power switching for uninterrupted power supply
- Induction Heating Equipment: For high-frequency, high-power control
- Welding Machines: Delivers consistent high current with efficiency
- Power Amplifiers & RF Systems: Suitable for high-power pulse and linear amplification
*Product image for illustration purposes only, actual product may vary.
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