2SK1317 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications
Features:-
• High breakdown voltage VDSS = 1500 V
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator, DC-DC converter and motor driver
Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 1500V |
| Continuous Drain Current (Id) | 2.5A |
| Drain-Source Resistance (Rds On) | 12Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Configuration | Single |
| Operating Temperature Range | -55 – 150°C |
| Power Dissipation (Pd) | 100W |
* product image for illustration purposes only. actual product may vary.
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