FDP090N10 N-Channel MOSFET is produced using advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features:-
• Low offset voltage
• Full-voltage operation
• Fast switching speed
• Low error voltage
• Low gate charge
• High power and current handling capability
Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 100V |
| Continuous Drain Current (Id) | 75A |
| Drain-Source Resistance (Rds On) | 9mOhms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 116 nC |
| Operating Temperature Range | -55 – 175°C |
| Power Dissipation (Pd) | 208W |
* product image for illustration purposes only. actual product may vary.
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